C-plane Aluminum Nitride (AlN) Substrates High Electric Resistivity

C-plane Aluminum Nitride (AlN) Substrates

 
  • High electric resistivity - 10+11- 10+13 0hm*cm
  • High thermal conductivity - 3.2 W/cm*K
  • Close lattice and thermal match with GaN (reduced epilayer cracking)
  • Mechanically and chemically stable
  • Low dislocation density – (in best 103 cm-2)
  • Optically transparent piezoelectric with high surface acoustic waves speed – 6*10^3 m/sec

Specification

Parameter Name Value Value
Diameter, mm 15 ± 0.38 50.8 ± 0.38
Thickness, mm 0.4 ± 0.03 0.4 ± 0.03
FWHM, arcsec <300 <300
Surface orientation (0001), +/-deg <0.5 <0.5
Al-face epi-ready epi-ready
Primary Flat Length, mm 8 ± 2 16 ± 2
Primary Flat orientation, +/-deg <11-20> ± 5 <11-20> ± 5
Secondary Flat Length, mm 4 ± 2 8 ± 2