Epi-ready M-plane Aluminium Nitride (AlN) Substrates for UV LEDs, lasers, RF amplifiers, and SAW filters

Patents

US Patent No. 6.261.363.Technique for growing silicon carbide monocrystals
US Patent No. 6.428.621.Method for growing low defect density silicon carbide
US Patent No. 6.508.880.Apparatus for growing low defect density silicon carbide
US Patent No. 6.534.026.Low defect density silicon carbide
US Patent No. 6.537.371.Niobium crucible fabrication and treatment
US Patent No. 6.547.877.Tantalum crucible fabrication and treatment
US Patent No. 6.562.130.Low defect axially grown single crystal silicon carbide
US Patent No. 6.562.131.Method for growing single crystal silicon carbide
US Patent No. 6.863.728.Apparatus for growing low defect density silicon carbide
US Patent No. 7.056.383.Tantalum based crucible