PVT SiC Wafers

Conducting Silicon Carbide (SiC) Substrates

6H3IA4D

 
  • Grade A
  • Polytype 6H
  • Diameter 3"

Specification

Parameter Name Value
Diameter, mm 76.2 ± 0.38
Thickness, mm (0.3 - 0.45) ± 0.03
Dopant N-type Nitrogen
Micropipe density, cm-2 < 25
Surface orientation (0001), +/-deg < 0.5
Si-face treatment Diamond polishing
Primary Flat Length, mm 22 ± 2
Primary Flat orientation, +/-deg <11 - 20> ± 5
Secondary Flat Length, mm 11 ± 2
Secondary Flat orientation, +/-deg Si-face: 90 ± 5 cw from orientation flat
Resistivity, Ohm*cm ≤ 0.1
Packaging Single wafer package

Visible defects in usable area < 10, 1mm edge exclusions are possible. Usable area > 90%.

Minimum order 15 pcs.