Production Grade SiC Wafers

Low Micropipe Silicon Carbide (SiC) Wafers

4H3IPC4D

 
  • Production Grade C
  • Polytype 4H
  • Diameter 3"

Specification

Parameter Name Value
Diameter, mm 76.2 ± 0.38
Thickness, mm (0.3 - 0.45) ± 0.03
Dopant N-type Nitrogen
Micropipe density, cm-2 < 5
Surface orientation, +/- deg 4 ± 0.5, off-axis
Si-face treatment Epi-ready
Primary Flat Length, mm 22 ± 2
Primary Flat orientation, +/-deg <11 - 20> ± 5
Secondary Flat Length, mm 11 ± 2
Secondary Flat orientation, +/-deg Si-face: 90 ± 5 cw from orientation flat
Resistivity, Ohm*cm ≤ 0.03
Packaging Single wafer package

Orders for 3” wafers can be placed starting in October, 2011.