EPI-ready SiC Wafers

Low Micropipe Silicon Carbide (SiC) Wafers

4H3IRC4D

 
  • Research Grade C
  • Polytype 4H
  • Diameter 3"

Specification

Parameter Name Value
Diameter, mm 76.2 ± 0.38
Thickness, mm (0.3 - 0.45) ± 0.03
Dopant N-type Nitrogen
Micropipe density, cm-2 < 5
Surface orientation, +/- deg 4 ± 0.5, off-axis
Si-face treatment Epi-ready
Primary Flat Length, mm 22 ± 2
Primary Flat orientation, +/-deg <11 - 20> ± 5
Secondary Flat Length, mm 11 ± 2
Secondary Flat orientation, +/-deg Si-face: 90 ± 5 cw from orientation flat
Resistivity, Ohm*cm ≤ 0.03
Packaging Single wafer package

Central part of the wafer is free of macroscopic defects. Local macroscopic defects (foreign polytype inclusion) near the edge of wafer are possible. The size of defects is not larger than 5 x 5 mm. Usable area 70-90%.

Orders for 3” wafers can be placed starting in October, 2011.