4H- Silicon Carbide Wafers

Low Micropipe Silicon Carbide (SiC) Wafers

4H2IPB4D

 
  • Production Grade B
  • Polytype 4H-
  • Diameter 2"

Specification

Parameter Name Value
Diameter, mm 50.8 ± 0.38
Thickness, mm (0.3 - 0.45) ± 0.03
Dopant N-type Nitrogen
Micropipe density, cm-2 < 2
Surface orientation, +/- deg 4 ± 0.5, off-axis
Si-face treatment Epi-ready
Primary Flat Length, mm 16 ± 2
Primary Flat orientation, +/-deg <11 - 20> ± 5
Secondary Flat Length, mm 8 ± 2
Secondary Flat orientation, +/-deg Si-face: 90 ± 5 cw from orientation flat
Resistivity, Ohm*cm ≤ 0.03
Packaging Single wafer package